Nouvelles technologies plasma
Atomic relocation processes in impurity-free disordered p -GaAs epilayers studied by deep level transient spectroscopy
Journal of Vacuum Science and Technology B
Journal of Vacuum Science & Technology B - AIP Publishing LLC
PDF) Roller nanoimprint lithography. J Vac Sci Technol B
Gate-controlled ZnO nanowires for field-emission device application
PDF) Synthesis of TiN/N-doped TiO 2 composite films as visible light active photocatalyst Synthesis of TiN/N-doped TiO 2 composite films as visible light active photocatalyst
Cu film thermal stability on plasma cleaned polycrystalline Ru
Reduction of exposing time in massively-parallel E-beam systems
PDF) Study of the NF3 plasma cleaning of reactors for amorphous silicon deposition | Giovanni Bruno - Academia.edu
EUV Maskless Lithography J. Vac. Sci. Technol. B 30, (2012); 9/25/20121K. Johnson - ppt download
Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
Journal of Vacuum Science & Technology B - AIP Publishing LLC
Atomic layer deposition of GaN at low temperatures
Impurity reduction in In 0.53 Ga 0.47 As layers grown by liquid phase epitaxy using Er- treated melts
Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber – topic of research paper in Materials engineering. Download scholarly article
Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transi
![PDF] Direct detection and imaging of low-energy electrons witk delta-doped charge-coupled devices | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/02b24a55d118620d5552380e5ca130033708d3c4/12-Figure2-1.png "PDF] Direct detection and imaging of low-energy electrons witk delta-doped charge-coupled devices | Semantic Scholar")
PDF] Direct detection and imaging of low-energy electrons witk delta-doped charge-coupled devices | Semantic Scholar
Solved 1,0 Helium ion exposure 0.8 3. (25 pts) The right | Chegg.com
HSQ - Nanolithography
Fabrication of reproducible sub-5 nm nanogaps by a focused ion beam and observation of Fowler-Nordheim tunneling
Nanoscale control of energy and matter in plasma–surface interactions: Toward energy- and matter-efficient nanotecha)
Layer-by-layer nanometer scale etching of two-dimensional substrates using the scanning tunneling microscope | Journal of the American Chemical Society
